PART |
Description |
Maker |
M25PE40 M25PE40-VMN6G M25PE40-VMN6P M25PE40-VMN6TG |
4 Mbit, page-erasable serial Flash memory with byte alterability, 75 MHz SPI bus, standard pinout
|
Numonyx B.V
|
M45PE40-VMW6G M45PE40-VMW6P M45PE40-VMW6TG M45PE40 |
4 Mbit, low voltage, Page-Erasable Serial Flash memory with byte-alterability and a 50 MHz SPI bus interface
|
Numonyx B.V
|
M45PE80-VMP6P |
8 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface
|
ST Microelectronics
|
M25PE40 M25PE40VMN6G M25PE40VMN6P M25PE40VMN6TG M2 |
4 Mbit, low voltage, Page-Erasable Serial Flash memory with byte alterability, 50 MHz SPI bus, standard pinout
|
STMicroelectronics
|
M25PE80-VMP6T M25PE80-VMW6P M25PE80-VMP6P M25PE80- |
4 Mbit Uniform Sector, Serial Flash Memory 4兆位统一部门,串行闪 COIL CHOKE 27MH .50A RADIAL 8兆位,低电压,页面与字节可擦除串行闪存更改性,50MHz的SPI总线,标准品 8 Mbit, Low Voltage, Page-Erasable Serial Flash Memory with Byte-Alterability, 50MHz SPI Bus, Standard Pin-out
|
STMicroelectronics N.V. ST Microelectronics
|
IS41C16105 IS41C16105-50K IS41C16105-50KE IS41C161 |
1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE 1M X 16 FAST PAGE DRAM, 50 ns, PDSO42 1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE 1M X 16 FAST PAGE DRAM, 50 ns, PDSO44
|
Integrated Silicon Solution Inc ISSI[Integrated Silicon Solution, Inc] Integrated Circuit Solution Inc Integrated Silicon Solution Inc Integrated Silicon Solution, Inc.
|
M29W128GH70N3E M29W128GL |
128-Mbit (16 Mbit x8 or 8 Mbit x16, page, uniform block) 3 V supply flash memory 128-Mbit (16 Mbit x8 or 8 Mbit x16, page, uniform block) 3 V supply flash memory
|
Numonyx B.V
|
UPD4265805G5-A50-7JD UPD4264805G5-A50-7JD UPD42658 |
18-Mbit QDR-II SRAM 2-Word Burst Architecture 1-Mbit (64K x 16) Static RAM 1M x 4 Static RAM x8 EDO Page Mode DRAM x8 EDO公司页面模式DRAM 4-Mbit (256K x 16) Static RAM
|
NEC TOKIN, Corp.
|
M45PE16 |
Page-Erasable Serial Flash Memory
|
ST Microelectronics
|
IS41LV8205-50J IS41LV8205-50JI IS41LV8205-60JI IS4 |
2M x 8 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE 2M X 8 FAST PAGE DRAM, 60 ns, PDSO28
|
Integrated Silicon Solution, Inc. ISSI[Integrated Silicon Solution, Inc]
|
LD27C513 LD27C513-170V10L LD27C513-250V10L LD27C51 |
PAGE-ADDRESSED 512K (4 X 16K X 8) UV ERASABLE PROM
|
http:// Intel Corp. INTEL[Intel Corporation]
|